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Microchip Technology

JAN2N5157

Single BJT Transistors

In StockRoHS: Compliant

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Specifications

Ürün Tipi
BJTs - Bipolar Transistors
Temel Ürün No
2N5157
RoHS
Non-Compliant
Voltage Collector Emitter Breakdown Max
500 V
Emitter Base Voltage Vebo
6 V
Seri
Military, MIL-PRF-19500/371
Montaj Tipi
Through Hole
Maks. Çalışma Sıcaklığı
125 °C
Pin Sayısı
3
Number Of Elements
1
Currentcollector Ic Max
3.5 A
Max Collector Current
3.5 A
Current Collector Cutoff Max
250μA
Kılıf / Paket
TO-204AA, TO-3
Fabrika Paket Adedi
1
Power Dissipation
5 W
Ambalaj
Bulk
Ürün Durumu
Active
Radyasyon Dayanımı
No
Dc Current Gain Hfe Min Ic Vce
30 @ 1A, 5V
Max Power Dissipation
5 W
Polarity
NPN
Lifecycle Status
Production (Last Updated: 2 months ago)
Vce Saturation Max Ib Ic
2.5V @ 700mA, 3.5A
Paket
Bulk
Power Max
5 W
Technology
Si
Min. Çalışma Sıcaklığı
-55 °C
Collector Emitter Voltage Vceo
500 V
Çalışma Sıcaklığı
-65°C ~ 200°C (TJ)
Collector Base Voltage Vcbo
700 V
Tedarikçi Cihaz Paketi
TO-204AA (TO-3)
Transistor Type
NPN
Montaj
Through Hole

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