DN3545N8-G

Specifications

Terminal Sayısı

3

JESD-609 Kodu

e3

Case Connection

DRAIN

Input Capacitance Ciss Max Vds

360pF @ 25V

Fet Type

N-Channel

Drain To Source Breakdown Voltage

450V

Weight

52.786812mg

Power Dissipation

1.6W

Rds On Max Id Vgs

20 Ω @ 150mA, 0V

Fall Time Typ

30 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pulsed Drain Currentmax Idm

0.3A

Gate To Source Voltage Vgs

20V

Reach Svhc

No SVHC

Number Of Channels

1

Turn On Delay Time

20 ns

Uzunluk

4.6mm

Continuous Drain Current Id

200mA

Genişlik

2.6mm

Drain Currentmax Abs Id

0.2A

Power Dissipation Max

1.6W Ta

Fabrika Tedarik Süresi

6 Weeks

Fet Feature

Depletion Mode

Montaj

Surface Mount

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

0V

Element Configuration

Single

Kılıf / Paket

TO-243AA

Number Of Elements

1

Contact Plating

Tin

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Parça Durumu

Active

Çalışma Sıcaklığı

-55°C~150°C TJ

Turn Off Delay Time

30 ns

Yayın Yılı

2005

Tepe Reflow Süresi (maks. sn)

40

Ambalaj

Tape & Reel (TR)

Vgs Max

±20V

Terminal Formu

FLAT