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DN3545N3-G

Microchip Technology

DN3545N3-G

Single MOSFETs Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.73
  • 10+ pcs$0.69
  • 100+ pcs$0.65
  • 500+ pcs$0.61

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RoHS

Compliant

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Specifications

Power Dissipation
740mW
Qualification Status
Not Qualified
Tepe Reflow Süresi (maks. sn)
NOT APPLICABLE
Rds On Max Id Vgs
20 Ω @ 150mA, 0V
Fall Time Typ
30 ns
Ambalaj
Bulk
Nem Hassasiyeti (MSL)
1 (Unlimited)
Turn Off Delay Time
30 ns
Drain To Source Breakdown Voltage
450V
Yayın Yılı
2010
Weight
453.59237mg
Parça Durumu
Active
Çalışma Sıcaklığı
-55°C~150°C TJ
Fet Type
N-Channel
Kurşunsuz
Lead Free
Number Of Elements
1
RoHS Durumu
ROHS3 Compliant
Element Configuration
Single
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA)
Input Capacitance Ciss Max Vds
360pF @ 25V
JESD-609 Kodu
e3
Drive Voltage Max Rds On Min Rds On
0V
Transistor Application
SWITCHING
Terminal Sayısı
3
Terminal Kaplaması
Matte Tin (Sn)
Fet Feature
Depletion Mode
Montaj Tipi
Through Hole
Yükseklik
5.33mm
Drain To Source Voltage Vdss
450V
Montaj
Through Hole
Terminal Pozisyonu
BOTTOM
Fabrika Tedarik Süresi
6 Weeks
Additional Feature
HIGH INPUT IMPEDANCE
Tepe Reflow Sıcaklığı (°C)
NOT APPLICABLE
Continuous Drain Current Id
136mA
Pin Sayısı
3
Uzunluk
5.21mm
Genişlik
4.19mm
Power Dissipation Max
740mW Ta
Transistor Element Material
SILICON

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