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DN2535N3-G

Microchip Technology

DN2535N3-G

Single MOSFETs Transistors

In StockRoHS: Compliant

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Specifications

Input Capacitance Ciss Max Vds
300pF @ 25V
Element Configuration
Single
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA)
RoHS Durumu
ROHS3 Compliant
Number Of Elements
1
Contact Plating
Tin
Terminal Sayısı
3
Transistor Application
SWITCHING
Drive Voltage Max Rds On Min Rds On
0V
JESD-609 Kodu
e3
Yayın Yılı
2008
Weight
453.59237mg
Turn Off Delay Time
15 ns
Drain To Source Breakdown Voltage
350V
Ambalaj
Bulk
Fall Time Typ
20 ns
Nem Hassasiyeti (MSL)
1 (Unlimited)
Power Dissipation
1W
Rds On Max Id Vgs
25 Ω @ 120mA, 0V
Fet Type
N-Channel
Kurşunsuz
Lead Free
Çalışma Sıcaklığı
-55°C~150°C TJ
Current Continuous Drain Id25
120mA Tj
Parça Durumu
Active
Feedback Capmax Crss
5 pF
ECCN Kodu
EAR99
Transistor Element Material
SILICON
Turn On Delay Time
10 ns
Vgs Max
±20V
Gate To Source Voltage Vgs
20V
Number Of Channels
1
Reach Svhc
No SVHC
Rise Time
15ns
Radyasyon Dayanımı
No
Terminal Pozisyonu
BOTTOM
Fabrika Tedarik Süresi
5 Weeks
Montaj
Through Hole
Fet Feature
Depletion Mode
Montaj Tipi
Through Hole
Yükseklik
5.33mm

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