APT9F100B

Specifications

Drain To Source Voltage Vdss

1000 V

Fall Time

24 ns

Power Dissipation Max

337W (Tc)

Input Capacitance Ciss Max Vds

2606 pF @ 25 V

Continuous Drain Current Id

9

Vgs Th Gatesource Threshold Voltage

4 V

Transistor Polarity

N-Channel

Gate Charge Qg Max Vgs

80 nC @ 10 V

Birim Ağırlık

0.211644 oz

Configuration

Single

Seri

POWER MOS 8™

Qg Gate Charge

80 nC

Minimum Operating Temperature

- 55 C

Vgsth Max Id

5V @ 1mA

Rds On Max Id Vgs

1.6Ohm @ 5A, 10V

Ambalaj

Tube

Power Dissipation

337

Vgs Max

±30V

Tedarikçi Cihaz Paketi

TO-247 [B]

Kılıf / Paket

TO-247-3

Forward Transconductance Min

10 S

RoHS

Details

Ürün Durumu

Active

Rds On Drainsource Resistance

1.6 Ohms

Fet Type

N-Channel

Montaj Stili

Through Hole

Vds Drainsource Breakdown Voltage

1 kV

Channel Type

N

Paket

Tube

Montaj Tipi

Through Hole

Drive Voltage Max Rds On Min Rds On

10V

Id Continuous Drain Current

9 A

Pd Power Dissipation

337 W

Fabrika Paket Adedi

1

Vgs Gatesource Voltage

- 30 V, + 30 V

Temel Ürün No

APT9F100

Typical Turnon Delay Time

27 ns

Rise Time

27 ns

Typical Turnoff Delay Time

84 ns

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)