APT84F50L

Specifications

Turnoff Timemax Toff

155 ns

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Power Dissipationmax Abs

1135 W

Max Junction Temperature Tj

150 °C

Drainsource On Resistancemax

0.065 Ω

Power Dissipation Max

1135W (Tc)

Number Of Elements

1

Continuous Drain Current Id

84 A

Vgs Th Gatesource Threshold Voltage

2.5 V

Vgs Max

±30V

Seri

POWER MOS 8™

Package Shape

RECTANGULAR

Qg Gate Charge

340 nC

Radyasyon Dayanımı

No

Transistor Type

1 N-Channel

Ürün Durumu

Active

Gate To Source Voltage Vgs

30 V

Turn Off Delay Time

155 ns

Drain To Source Resistance

55 mΩ

Jesd30 Code

R-PSFM-T3

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Risk Rank

1.52

Current Continuous Drain Id25

84A (Tc)

Maks. Çalışma Sıcaklığı

150 °C

Terminal Formu

THROUGH-HOLE

Vgs Gatesource Voltage

- 30 V, + 30 V

Lifecycle Status

Production (Last Updated: 2 months ago)

Power Dissipation Ambientmax

1135 W

Drain To Source Breakdown Voltage

500 V

Package Description

TO-264, 3 PIN

Montaj

Through Hole

Avalanche Energy Rating Eas

1845 mJ

Number Of Terminals

3

Gate Charge Qg Max Vgs

340 nC @ 10 V

Terminal Kaplaması

PURE MATTE TIN

Qualification Status

Not Qualified

Turnon Timemax Ton

60 ns

Input Capacitance Ciss Max Vds

13500 pF @ 25 V

Power Dissipation

1.135 kW

Ds Breakdown Voltagemin

500 V