APT8065BVRG

Specifications

Fet Type

N-Channel

Rds On Drainsource Resistance

650 mOhms

Ürün Durumu

Active

RoHS

Details

Kılıf / Paket

TO-247-3

Paket

Tube

Vds Drainsource Breakdown Voltage

800 V

Channel Type

N

Montaj Stili

Through Hole

Vgs Gatesource Voltage

- 30 V, + 30 V

Fabrika Paket Adedi

1

Number Of Channels

1 Channel

Pd Power Dissipation

280 W

Id Continuous Drain Current

13 A

Montaj Tipi

Through Hole

Current Continuous Drain Id25

13A (Tc)

Maks. Çalışma Sıcaklığı

+ 150 C

Channel Mode

Enhancement

Temel Ürün No

APT8065

Gate Charge Qg Max Vgs

225 nC @ 10 V

Transistor Polarity

N-Channel

Continuous Drain Current Id

13

Vgs Th Gatesource Threshold Voltage

2 V

Input Capacitance Ciss Max Vds

3700 pF @ 25 V

Drain To Source Voltage Vdss

800 V

Birim Ağırlık

0.211644 oz

Rds On Max Id Vgs

650mOhm @ 500mA, 10V

Vgsth Max Id

4V @ 1mA

Minimum Operating Temperature

- 55 C

Qg Gate Charge

225 nC

Configuration

Single

Seri

POWER MOS V®

Tedarikçi Cihaz Paketi

TO-247 [B]

Ambalaj

Tube