Volume pricing
- 1+ pcs$12.02
- 10+ pcs$11.34
- 100+ pcs$10.70
- 500+ pcs$10.09
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Input Capacitance
- 2.035 nF
- Birim Ağırlık
- 0.211644 oz
- Transistor Polarity
- N-Channel
- Number Of Elements
- 1
- Continuous Drain Current Id
- 15 A
- Terminal Pozisyonu
- SINGLE
- Vgs Th Gatesource Threshold Voltage
- 3 V
- Turn On Delay Time
- 9 ns
- Drainsource On Resistancemax
- 0.52 Ω
- Drain To Source Voltage Vdss
- 800 V
- Case Connection
- DRAIN
- Tedarikçi Cihaz Paketi
- TO-247 [B]
- Ambalaj
- Tube
- Min. Çalışma Sıcaklığı
- -55 °C
- Minimum Operating Temperature
- - 55 C
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Seri
- POWER MOS 7®
- Package Shape
- RECTANGULAR
- Qg Gate Charge
- 75 nC
- Paket
- Tube
- Vds Drainsource Breakdown Voltage
- 800 V
- Radyasyon Dayanımı
- No
- Turn Off Delay Time
- 23 ns
- Fet Type
- N-Channel
- Gate To Source Voltage Vgs
- 30 V
- Ürün Durumu
- Active
- Üretici Parça No
- APT8052BLLG
- REACH Uyumluluk Kodu
- compliant
- Package Style
- FLANGE MOUNT
- Jesd30 Code
- R-PSFM-T3
- Yüzey Montaj
- NO
- Channel Mode
- Enhancement
- Current Continuous Drain Id25
- 15A (Tc)
- Risk Rank
- 5.74
- Maks. Çalışma Sıcaklığı
- 150 °C
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Terminal Formu
- THROUGH-HOLE
- Polaritychannel Type
- N-CHANNEL
- Fabrika Paket Adedi
- 1
- Operating Temperaturemin
- -55 °C
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