APT8014L2FLLG

Specifications

Input Capacitance

7.24 nF

Birim Ağırlık

0.352740 oz

Schedule B

8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080

Transistor Polarity

N-Channel

Turn On Delay Time

20 ns

Vgs Th Gatesource Threshold Voltage

3 V

Continuous Drain Current Id

52 A

Drain To Source Voltage Vdss

800 V

Tedarikçi Cihaz Paketi

264 MAX™ [L2]

Ambalaj

Tube

Min. Çalışma Sıcaklığı

-55 °C

Minimum Operating Temperature

- 55 C

Qg Gate Charge

285 nC

Seri

POWER MOS 7®

Paket

Tube

Radyasyon Dayanımı

No

Vds Drainsource Breakdown Voltage

800 V

Fet Type

N-Channel

Turn Off Delay Time

69 ns

Ürün Durumu

Active

Gate To Source Voltage Vgs

30 V

Channel Mode

Enhancement

Current Continuous Drain Id25

52A (Tc)

Maks. Çalışma Sıcaklığı

150 °C

Vgs Gatesource Voltage

- 30 V, + 30 V

Pin Sayısı

3

Fabrika Paket Adedi

1

Lifecycle Status

Production (Last Updated: 1 month ago)

Montaj

Through Hole

Gate Charge Qg Max Vgs

285 nC @ 10 V

Input Capacitance Ciss Max Vds

7238 pF @ 25 V

Power Dissipation

893

Rds On Max Id Vgs

160mOhm @ 26A, 10V

Vgsth Max Id

5V @ 5mA

Configuration

Single

Montaj Stili

Through Hole

Channel Type

N

Voltage Rating Dc

800 V

Rds On Drainsource Resistance

160 mOhms

Kurşunsuz

Lead Free