Volume pricing
- 1+ pcs$3.46
- 10+ pcs$3.26
- 100+ pcs$3.08
- 500+ pcs$2.90
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Minimum Operating Temperature
- - 55 C
- Qg Gate Charge
- 58 nC
- Ambalaj
- Tube
- Vgs Max
- ±30V
- Tedarikçi Cihaz Paketi
- TO-247 [B]
- Min. Çalışma Sıcaklığı
- -55 °C
- Transistor Polarity
- N-Channel
- Fall Time
- 22 ns
- Drain To Source Voltage Vdss
- 1000 V
- Power Dissipation Max
- 290W (Tc)
- Number Of Elements
- 1
- Continuous Drain Current Id
- 7 A
- Vgs Th Gatesource Threshold Voltage
- 2.5 V
- Turn On Delay Time
- 24 ns
- Input Capacitance
- 1.8 nF
- Birim Ağırlık
- 0.211644 oz
- Fabrika Paket Adedi
- 1
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Channel Mode
- Enhancement
- Çalışma Sıcaklığı
- -55°C ~ 150°C (TJ)
- Current Continuous Drain Id25
- 7A (Tc)
- Maks. Çalışma Sıcaklığı
- 150 °C
- Gate To Source Voltage Vgs
- 30 V
- Ürün Durumu
- Active
- Turn Off Delay Time
- 77 ns
- Fet Type
- N-Channel
- Paket
- Tube
- Radyasyon Dayanımı
- No
- Vds Drainsource Breakdown Voltage
- 1 kV
- Transistor Type
- 1 N-Channel
- Vgsth Max Id
- 5V @ 500µA
- Rds On Max Id Vgs
- 2Ohm @ 4A, 10V
- Configuration
- Single
- Power Dissipation
- 290 W
- Max Power Dissipation
- 290 W
- Gate Charge Qg Max Vgs
- 58 nC @ 10 V
- Input Capacitance Ciss Max Vds
- 1800 pF @ 25 V
- Lifecycle Status
- Production (Last Updated: 2 months ago)
- Montaj
- Through Hole
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