Volume pricing
- 1+ pcs$13.65
- 10+ pcs$12.88
- 100+ pcs$12.15
- 500+ pcs$11.46
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Paket
- Tube
- Vds Drainsource Breakdown Voltage
- 500 V
- Radyasyon Dayanımı
- No
- Gate To Source Voltage Vgs
- 30 V
- Ürün Durumu
- Active
- Turn Off Delay Time
- 120 ns
- Fet Type
- N-Channel
- Channel Mode
- Enhancement
- Çalışma Sıcaklığı
- -55°C ~ 150°C (TJ)
- Current Continuous Drain Id25
- 75A (Tc)
- Maks. Çalışma Sıcaklığı
- 150 °C
- Fabrika Paket Adedi
- 1
- Pin Sayısı
- 3
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Input Capacitance
- 11.6 nF
- Birim Ağırlık
- 0.208116 oz
- Transistor Polarity
- N-Channel
- Drain To Source Voltage Vdss
- 500 V
- Fall Time
- 39 ns
- Power Dissipation Max
- 1040W (Tc)
- Turn On Delay Time
- 45 ns
- Vgs Th Gatesource Threshold Voltage
- 4 V
- Continuous Drain Current Id
- 75 A
- Number Of Elements
- 1
- Ambalaj
- Tube
- Vgs Max
- ±30V
- Tedarikçi Cihaz Paketi
- T-MAX™ [B2]
- Min. Çalışma Sıcaklığı
- -55 °C
- Minimum Operating Temperature
- - 55 C
- Seri
- POWER MOS 8™
- Qg Gate Charge
- 290 nC
- Rds On Max
- 75 mΩ
- Montaj Stili
- Through Hole
- Rds On Drainsource Resistance
- 75 mOhms
- Forward Transconductance Min
- 55 S
- Kılıf / Paket
- T-MAX-3
- RoHS
- Details
- Maks. Çalışma Sıcaklığı
- + 150 C
- Temel Ürün No
- APT75F50
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