Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- RoHS
- Details
- Kurşunsuz
- Lead Free
- Rohs Code
- Yes
- Channel Type
- N
- Montaj Stili
- Through Hole
- Rds On Max
- 100 mΩ
- Number Of Channels
- 1 Channel
- Pd Power Dissipation
- 1.135 kW
- Transistor Application
- SWITCHING
- Tradename
- Power MOS 8
- Montaj Tipi
- Through Hole
- Temel Ürün No
- APT66M60
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Pulsed Drain Currentmax Idm
- 245 A
- Part Life Cycle Code
- Active
- Pin Sayısı
- 3
- Max Power Dissipation
- 1.135 kW
- Package Style
- IN-LINE
- REACH Uyumluluk Kodu
- unknown
- Yüzey Montaj
- NO
- Fet Type
- N-Channel
- Üretici Parça No
- APT66M60B2
- Vds Drainsource Breakdown Voltage
- 600 V
- Reflow Temperaturemax S
- NOT SPECIFIED
- Paket
- Tube
- Drive Voltage Max Rds On Min Rds On
- 10V
- Polaritychannel Type
- N-CHANNEL
- Fabrika Paket Adedi
- 1
- Channel Mode
- Enhancement
- Terminal Pozisyonu
- SINGLE
- Turn On Delay Time
- 75 ns
- Case Connection
- DRAIN
- Drain To Source Voltage Vdss
- 600 V
- Fall Time
- 70 ns
- Kurşunsuz Kodu
- Yes
- Transistor Polarity
- N-Channel
- Birim Ağırlık
- 0.208116 oz
- Input Capacitance
- 13.19 nF
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
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