APT6015LVFRG

Specifications

Gate Charge Qg Max Vgs

475 nC @ 10 V

Vgsth Max Id

4V @ 2.5mA

Number Of Channels

1 Channel

Rds On Drainsource Resistance

150 mOhms

Vgs Th Gatesource Threshold Voltage

2 V

Pd Power Dissipation

520 W

Montaj Tipi

Through Hole

Channel Mode

Enhancement

Montaj Stili

Through Hole

Maks. Çalışma Sıcaklığı

+ 150 C

Transistor Polarity

N-Channel

Vds Drainsource Breakdown Voltage

600 V

Minimum Operating Temperature

- 55 C

Ürün Durumu

Active

Vgs Gatesource Voltage

- 30 V, + 30 V

Input Capacitance Ciss Max Vds

9000 pF @ 25 V

Seri

POWER MOS V®

Configuration

Single

Ambalaj

Tube

Drain To Source Voltage Vdss

600 V

Kılıf / Paket

TO-264-3

Birim Ağırlık

0.352740 oz

Id Continuous Drain Current

38 A

Fet Type

N-Channel

Fabrika Paket Adedi

1

Current Continuous Drain Id25

38A (Tc)

Rds On Max Id Vgs

150mOhm @ 500mA, 10V

Temel Ürün No

APT6015

Tedarikçi Cihaz Paketi

TO-264 [L]

Qg Gate Charge

475 nC

Paket

Tube