Volume pricing
- 1+ pcs$10.79
- 10+ pcs$10.18
- 100+ pcs$9.60
- 500+ pcs$9.06
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Minimum Operating Temperature
- - 55 C
- Seri
- POWER MOS 8™
- Configuration
- Single
- Input Capacitance
- 8.8 nF
- Lifecycle Status
- Production (Last Updated: 2 months ago)
- Vgs Th Gatesource Threshold Voltage
- 4 V
- Vgs Max
- ±30V
- RoHS
- Details
- Rds On Drainsource Resistance
- 100 mOhms
- Channel Mode
- Enhancement
- Continuous Drain Current Id
- 56 A
- Max Power Dissipation
- 780 W
- Forward Transconductance Min
- 43 S
- Rds On Max Id Vgs
- 100mOhm @ 28A, 10V
- Temel Ürün No
- APT56F50
- Montaj
- Through Hole
- Tedarikçi Cihaz Paketi
- TO-264 [L]
- Çalışma Sıcaklığı
- -55°C ~ 150°C (TJ)
- Radyasyon Dayanımı
- No
- Turn Off Delay Time
- 100 ns
- Id Continuous Drain Current
- 56 A
- Fabrika Paket Adedi
- 1
- Min. Çalışma Sıcaklığı
- -55 °C
- Vds Drainsource Breakdown Voltage
- 500 V
- Ürün Durumu
- Active
- Input Capacitance Ciss Max Vds
- 8800 pF @ 25 V
- Fall Time
- 33 ns
- Transistor Polarity
- N-Channel
- Power Dissipation Max
- 780W (Tc)
- Ambalaj
- Tube
- Gate Charge Qg Max Vgs
- 220 nC @ 10 V
- Vgsth Max Id
- 5V @ 2.5mA
- Number Of Elements
- 1
- Number Of Channels
- 1 Channel
- Montaj Stili
- Through Hole
- Maks. Çalışma Sıcaklığı
- + 150 C
- Pd Power Dissipation
- 780 W
- Gate To Source Voltage Vgs
- 30 V
- Montaj Tipi
- Through Hole
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