APT5015BVRG

Specifications

Maks. Çalışma Sıcaklığı

+ 150 C

Montaj Stili

Through Hole

Montaj Tipi

Through Hole

Pd Power Dissipation

370 W

Ihs Manufacturer

MICROSEMI CORP

Drain Currentmax Id

32 A

Package Description

FLANGE MOUNT, R-PSFM-T3

Kurşunsuz Kodu

Yes

Number Of Channels

1 Channel

Number Of Elements

1

Qualification Status

Not Qualified

Vgsth Max Id

4V @ 1mA

Gate Charge Qg Max Vgs

300 nC @ 10 V

Terminal Pozisyonu

SINGLE

Ambalaj

Tube

Drainsource On Resistancemax

0.15 Ω

Pulsed Drain Currentmax Idm

128 A

JESD-609 Kodu

e1

Case Connection

DRAIN

Input Capacitance Ciss Max Vds

5280 pF @ 25 V

Ürün Durumu

Active

Package Style

FLANGE MOUNT

Vds Drainsource Breakdown Voltage

500 V

Transistor Polarity

N-Channel

Fet Type

N-Channel

REACH Uyumluluk Kodu

compliant

Transistor Application

SWITCHING

Birim Ağırlık

0.211644 oz

Kılıf / Paket

TO-247-3

Yüzey Montaj

NO

Drain To Source Voltage Vdss

500 V

Operating Temperaturemax

150 °C

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Qg Gate Charge

200 nC

Paket

Tube

Avalanche Energy Rating Eas

1300 mJ

Üretici Parça No

APT5015BVRG

Jesd30 Code

R-PSFM-T3

Power Dissipation

370

Transistor Element Material

SILICON