Volume pricing
- 1+ pcs$19.90
- 10+ pcs$18.78
- 100+ pcs$17.71
- 500+ pcs$16.71
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Seri
- POWER MOS 8™
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Minimum Operating Temperature
- - 55 C
- Input Capacitance
- 9.33 nF
- Configuration
- Single
- Rds On Drainsource Resistance
- 170 mOhms
- RoHS
- Details
- Vgs Max
- ±30V
- Vgs Th Gatesource Threshold Voltage
- 3 V
- Lifecycle Status
- Production (Last Updated: 2 months ago)
- Forward Transconductance Min
- 43 S
- Max Power Dissipation
- 1.135 kW
- Continuous Drain Current Id
- 49 A
- Voltage Rating Dc
- 800 V
- Channel Mode
- Enhancement
- Temel Ürün No
- APT48M80
- Rds On Max Id Vgs
- 190mOhm @ 24A, 10V
- Çalışma Sıcaklığı
- -55°C ~ 150°C (TJ)
- Kurşunsuz
- Lead Free
- Tedarikçi Cihaz Paketi
- T-MAX™ [B2]
- Montaj
- Through Hole
- Turn Off Delay Time
- 230 ns
- Radyasyon Dayanımı
- No
- Transistor Type
- 1 N-Channel
- Min. Çalışma Sıcaklığı
- -55 °C
- Fabrika Paket Adedi
- 1
- Id Continuous Drain Current
- 49 A
- Akım Değeri
- 48 A
- Fall Time
- 70 ns
- Transistor Polarity
- N-Channel
- Input Capacitance Ciss Max Vds
- 9330 pF @ 25 V
- Ürün Durumu
- Active
- Vds Drainsource Breakdown Voltage
- 800 V
- Ambalaj
- Tube
- Power Dissipation Max
- 1135W (Tc)
- Number Of Elements
- 1
- Number Of Channels
- 1 Channel
- Vgsth Max Id
- 5V @ 2.5mA
- Gate Charge Qg Max Vgs
- 305 nC @ 10 V
- Maks. Çalışma Sıcaklığı
- 150 °C
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