APT42F50S

Specifications

Number Of Channels

1 Channel

Gate Charge Qg Max Vgs

170 nC @ 10 V

Vgsth Max Id

5V @ 1mA

Maks. Çalışma Sıcaklığı

150 °C

Rise Time

35 ns

Montaj Stili

SMD/SMT

Maks. Çalışma Sıcaklığı

+ 150 C

Pd Power Dissipation

625 W

Montaj Tipi

Surface Mount

Gate To Source Voltage Vgs

30 V

Vds Drainsource Breakdown Voltage

500 V

Input Capacitance Ciss Max Vds

6810 pF @ 25 V

Ürün Durumu

Active

Fall Time

26 ns

Transistor Polarity

N-Channel

Ambalaj

Tube

Power Dissipation Max

625W (Tc)

Birim Ağırlık

0.218699 oz

Drain To Source Voltage Vdss

500 V

Drive Voltage Max Rds On Min Rds On

10V

Kılıf / Paket

D3PAK-3

Fet Type

N-Channel

Rds On Max

130 mΩ

Typical Turnon Delay Time

29 ns

Turn On Delay Time

29 ns

Current Continuous Drain Id25

42A (Tc)

Qg Gate Charge

170 nC

Paket

Tube

Typical Turnoff Delay Time

80 ns

Lifecycle Status

Production (Last Updated: 2 months ago)

Vgs Th Gatesource Threshold Voltage

2.5 V

Vgs Max

±30V

Rds On Drainsource Resistance

110 mOhms

RoHS

Details

Max Power Dissipation

625 W

Forward Transconductance Min

32 S

Channel Mode

Enhancement

Continuous Drain Current Id

42 A

Seri

POWER MOS 8™

Vgs Gatesource Voltage

- 30 V, + 30 V