Volume pricing
- 1+ pcs$8.37
- 10+ pcs$7.89
- 100+ pcs$7.45
- 500+ pcs$7.03
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Montaj Tipi
- Through Hole
- Pd Power Dissipation
- 625 W
- Maks. Çalışma Sıcaklığı
- + 150 C
- Montaj Stili
- Through Hole
- Yükseklik
- 5.31 mm
- Channel Mode
- Enhancement
- Forward Transconductance Min
- 32 S
- Rise Time
- 35 ns
- Vgsth Max Id
- 5V @ 1mA
- Gate Charge Qg Max Vgs
- 170 nC @ 10 V
- Rds On Drainsource Resistance
- 110 mOhms
- RoHS
- Details
- Vgs Max
- ±30V
- Number Of Channels
- 1 Channel
- Vgs Th Gatesource Threshold Voltage
- 4 V
- Configuration
- Single
- Power Dissipation Max
- 625W (Tc)
- Ambalaj
- Tube
- Transistor Polarity
- N-Channel
- Fall Time
- 26 ns
- Minimum Operating Temperature
- - 55 C
- Ürün Durumu
- Active
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Input Capacitance Ciss Max Vds
- 6810 pF @ 25 V
- Vds Drainsource Breakdown Voltage
- 500 V
- Seri
- POWER MOS 8™
- Id Continuous Drain Current
- 42 A
- Typical Turnon Delay Time
- 29 ns
- Fet Type
- N-Channel
- Fabrika Paket Adedi
- 1
- Kılıf / Paket
- TO-247-3
- Drive Voltage Max Rds On Min Rds On
- 10V
- Drain To Source Voltage Vdss
- 500 V
- Birim Ağırlık
- 0.211644 oz
- Uzunluk
- 21.46 mm
- Genişlik
- 16.26 mm
- Tedarikçi Cihaz Paketi
- TO-247 [B]
- Typical Turnoff Delay Time
- 80 ns
- Çalışma Sıcaklığı
- -55°C ~ 150°C (TJ)
- Qg Gate Charge
- 170 nC
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