Volume pricing
- 1+ pcs$13.55
- 10+ pcs$12.79
- 100+ pcs$12.06
- 500+ pcs$11.38
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Seri
- POWER MOS 8™
- Fall Time
- 60 ns
- Transistor Polarity
- N-Channel
- Vds Drainsource Breakdown Voltage
- 800 V
- Minimum Operating Temperature
- - 55 C
- Ürün Durumu
- Active
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Input Capacitance Ciss Max Vds
- 8070 pF @ 25 V
- Ambalaj
- Tube
- Configuration
- Single
- Power Dissipation Max
- 1040W (Tc)
- Number Of Channels
- 1 Channel
- Vgs Max
- ±30V
- RoHS
- Details
- Rds On Drainsource Resistance
- 190 mOhms
- Vgs Th Gatesource Threshold Voltage
- 2.5 V
- Gate Charge Qg Max Vgs
- 260 nC @ 10 V
- Channel Type
- N
- Vgsth Max Id
- 5V @ 2.5mA
- Forward Transconductance Min
- 38 S
- Rise Time
- 65 ns
- Pd Power Dissipation
- 1.04 kW
- Montaj Tipi
- Through Hole
- Channel Mode
- Enhancement
- Continuous Drain Current Id
- 41
- Montaj Stili
- Through Hole
- Maks. Çalışma Sıcaklığı
- + 150 C
- Current Continuous Drain Id25
- 41A (Tc)
- Rds On Max Id Vgs
- 240mOhm @ 20A, 10V
- Temel Ürün No
- APT38F80
- Power Dissipation
- 1.04
- Çalışma Sıcaklığı
- -55°C ~ 150°C (TJ)
- Qg Gate Charge
- 260 nC
- Paket
- Tube
- Typical Turnoff Delay Time
- 200 ns
- Tedarikçi Cihaz Paketi
- T-MAX™ [B2]
- Transistor Type
- 1 N-Channel
- Drain To Source Voltage Vdss
- 800 V
- Kılıf / Paket
- TO-247-3
- Drive Voltage Max Rds On Min Rds On
- 10V
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