APT34N80LC3G

Specifications

Power Dissipation Max

417W (Tc)

Drainsource On Resistancemax

0.145 Ω

Ambalaj

Tube

Terminal Pozisyonu

SINGLE

JESD-609 Kodu

e1

Case Connection

DRAIN

Input Capacitance Ciss Max Vds

4510 pF @ 25 V

Ürün Durumu

Active

Package Style

FLANGE MOUNT

Vds Drainsource Breakdown Voltage

800 V

Fall Time

6 ns

Transistor Polarity

N-Channel

Pulsed Drain Currentmax Idm

102 A

Montaj Stili

Through Hole

Maks. Çalışma Sıcaklığı

+ 150 C

Yükseklik

5.21 mm

Montaj Tipi

Through Hole

Pd Power Dissipation

417 W

Ihs Manufacturer

MICROSEMI CORP

Rise Time

15 ns

Part Package Code

TO-264AA

Qualification Status

Not Qualified

Vgsth Max Id

3.9V @ 2mA

Gate Charge Qg Max Vgs

355 nC @ 10 V

Drain Currentmax Id

34 A

Package Description

FLANGE MOUNT, R-PSFM-T3

Number Of Elements

1

Number Of Channels

1 Channel

Kurşunsuz Kodu

Yes

Typical Turnoff Delay Time

70 ns

Jesd30 Code

R-PSFM-T3

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Qg Gate Charge

180 nC

Paket

Tube

Avalanche Energy Rating Eas

670 mJ

Üretici Parça No

APT34N80LC3G

Transistor Element Material

SILICON

Current Continuous Drain Id25

34A (Tc)

Additional Feature

AVALANCHE RATED

Typical Turnon Delay Time

25 ns