Volume pricing
- 1+ pcs$10.01
- 10+ pcs$9.44
- 100+ pcs$8.91
- 500+ pcs$8.40
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Type
- N-Channel
- Typical Turnon Delay Time
- 37 ns
- Ürün Tipi
- MOSFET
- Transistor Application
- SWITCHING
- REACH Uyumluluk Kodu
- unknown
- Drain To Source Voltage Vdss
- 600 V
- Operating Temperaturemax
- 150 °C
- Drive Voltage Max Rds On Min Rds On
- 10V
- Kılıf / Paket
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Yüzey Montaj
- YES
- Birim Ağırlık
- 0.218699 oz
- Üretici Parça No
- APT34M60S
- Qg Gate Charge
- 165 nC
- Paket
- Tube
- Avalanche Energy Rating Eas
- 930 mJ
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Jesd30 Code
- R-PSSO-G2
- Typical Turnoff Delay Time
- 115 ns
- Power Dissipationmax Abs
- 624 W
- Additional Feature
- AVALANCHE RATED, HIGH RELIABILITY
- Current Continuous Drain Id25
- 36A (Tc)
- Transistor Element Material
- SILICON
- Rise Time
- 43 ns
- Pd Power Dissipation
- 624 W
- Ihs Manufacturer
- MICROSEMI CORP
- Montaj Tipi
- Surface Mount
- Maks. Çalışma Sıcaklığı
- + 150 C
- Montaj Stili
- SMD/SMT
- Number Of Elements
- 1
- Number Of Channels
- 1 Channel
- Kurşunsuz Kodu
- Yes
- Package Description
- ROHS COMPLIANT, D3PAK-3/2
- Drain Currentmax Id
- 36 A
- Gate Charge Qg Max Vgs
- 165 nC @ 10 V
- Vgsth Max Id
- 5V @ 1mA
- Qualification Status
- Not Qualified
- Terminal Pozisyonu
- SINGLE
- Ambalaj
- Tube
- Drainsource On Resistancemax
- 0.19 Ω
- Power Dissipation Max
- 624W (Tc)
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