APT31M100L

Specifications

Ambalaj

Tube

Configuration

Single

Power Dissipation Max

1040W (Tc)

Seri

POWER MOS 8™

Fall Time

33 ns

Transistor Polarity

N-Channel

Vds Drainsource Breakdown Voltage

1 kV

Minimum Operating Temperature

- 55 C

Ürün Durumu

Active

Vgs Gatesource Voltage

- 30 V, + 30 V

Input Capacitance Ciss Max Vds

8500 pF @ 25 V

Forward Transconductance Min

34 S

Rise Time

35 ns

Pd Power Dissipation

1.04 kW

Montaj Tipi

Through Hole

Channel Mode

Enhancement

Maks. Çalışma Sıcaklığı

+ 150 C

Montaj Stili

Through Hole

Number Of Channels

1 Channel

Vgs Max

±30V

Rds On Drainsource Resistance

380 mOhms

RoHS

Details

Vgs Th Gatesource Threshold Voltage

4 V

Gate Charge Qg Max Vgs

260 nC @ 10 V

Vgsth Max Id

5V @ 2.5mA

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Paket

Tube

Qg Gate Charge

260 nC

Typical Turnoff Delay Time

130 ns

Tedarikçi Cihaz Paketi

TO-264

Current Continuous Drain Id25

32A (Tc)

Rds On Max Id Vgs

400mOhm @ 16A, 10V

Temel Ürün No

APT31M100

Fet Type

N-Channel

Fabrika Paket Adedi

1

Typical Turnon Delay Time

39 ns

Id Continuous Drain Current

32 A

Drain To Source Voltage Vdss

1000 V

Kılıf / Paket

TO-264-3

Drive Voltage Max Rds On Min Rds On

10V