Volume pricing
- 1+ pcs$13.95
- 10+ pcs$13.16
- 100+ pcs$12.42
- 500+ pcs$11.72
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Polarity
- N-Channel
- Birim Ağırlık
- 0.352740 oz
- Power Dissipation
- 1.04
- Yükseklik
- 5.21 mm
- Fall Time
- 42 ns
- Gate Charge Qg Max Vgs
- 260 nC @ 10 V
- Tradename
- Power MOS 8
- Pd Power Dissipation
- 1.04 kW
- Input Capacitance Ciss Max Vds
- 8370 pF @ 25 V
- Continuous Drain Current Id
- 24
- Ambalaj
- Tube
- Qg Gate Charge
- 260 nC
- Drain To Source Voltage Vdss
- 1200 V
- Rds On Max Id Vgs
- 680mOhm @ 12A, 10V
- Current Continuous Drain Id25
- 24A (Tc)
- Paket
- Tube
- Typical Turnoff Delay Time
- 145 ns
- Vgsth Max Id
- 5V @ 2.5mA
- Fet Type
- N-Channel
- Number Of Channels
- 1 Channel
- Genişlik
- 20.5 mm
- Kılıf / Paket
- TO-264-3
- Power Dissipation Max
- 1040W (Tc)
- Rise Time
- 27 ns
- Vgs Max
- ±30V
- Fabrika Paket Adedi
- 1
- Vgs Th Gatesource Threshold Voltage
- 4 V
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Seri
- POWER MOS 8™
- Channel Mode
- Enhancement
- Forward Transconductance Min
- 27 S
- Montaj Stili
- Through Hole
- Çalışma Sıcaklığı
- -55°C ~ 150°C (TJ)
- Configuration
- Single
- RoHS
- Details
- Ürün Durumu
- Active
- Id Continuous Drain Current
- 24 A
- Vds Drainsource Breakdown Voltage
- 1.2 kV
- Uzunluk
- 26.49 mm
- Maks. Çalışma Sıcaklığı
- + 150 C
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