APT20M45BVFRG

Specifications

Rise Time

14 ns

Vgs Max

±30V

Fabrika Paket Adedi

1

Vgs Th Gatesource Threshold Voltage

2 V

Seri

POWER MOS V®

Vgs Gatesource Voltage

- 30 V, + 30 V

Channel Mode

Enhancement

Montaj Stili

Through Hole

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

RoHS

Details

Configuration

Single

Ürün Durumu

Active

Vds Drainsource Breakdown Voltage

200 V

Id Continuous Drain Current

56 A

Maks. Çalışma Sıcaklığı

+ 150 C

Tedarikçi Cihaz Paketi

TO-247 [B]

Rds On Drainsource Resistance

45 mOhms

Montaj Tipi

Through Hole

Typical Turnon Delay Time

12 ns

Temel Ürün No

APT20M45

Drive Voltage Max Rds On Min Rds On

10V

Transistor Type

1 N-Channel

Minimum Operating Temperature

- 55 C

Transistor Polarity

N-Channel

Birim Ağırlık

0.211644 oz

Fall Time

7 ns

Gate Charge Qg Max Vgs

195 nC @ 10 V

Pd Power Dissipation

300 W

Input Capacitance Ciss Max Vds

4860 pF @ 25 V

Ambalaj

Tube

Qg Gate Charge

195 nC

Current Continuous Drain Id25

56A (Tc)

Rds On Max Id Vgs

45mOhm @ 500mA, 10V

Drain To Source Voltage Vdss

200 V

Typical Turnoff Delay Time

43 ns

Paket

Tube

Vgsth Max Id

4V @ 1mA

Fet Type

N-Channel

Number Of Channels

1 Channel

Kılıf / Paket

TO-247-3