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Same-day dispatch from stock
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Compliant
Support
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Specifications
- Gate Charge Qg Max Vgs
- 110 nC @ 10 V
- Pd Power Dissipation
- 568 W
- Akım Değeri
- 100 A
- Birim Ağırlık
- 0.208116 oz
- Lifecycle Status
- Production (Last Updated: 2 months ago)
- Power Dissipation
- 568 W
- Kurşunsuz
- Lead Free
- Vgsth Max Id
- 5V @ 2.5mA
- Kılıf / Paket
- T-MAX-3
- Number Of Channels
- 1 Channel
- Fet Type
- N-Channel
- Gate To Source Voltage Vgs
- 30 V
- Continuous Drain Current Id
- 100 A
- Paket
- Tube
- Qg Gate Charge
- 110 nC
- Montaj Stili
- Through Hole
- Channel Mode
- Enhancement
- Seri
- POWER MOS V®
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Configuration
- Single
- RoHS
- Details
- Radyasyon Dayanımı
- No
- Number Of Elements
- 1
- Vgs Th Gatesource Threshold Voltage
- 3 V
- Fabrika Paket Adedi
- 1
- Min. Çalışma Sıcaklığı
- -55 °C
- Temel Ürün No
- APT20M20
- Pin Sayısı
- 3
- Tedarikçi Cihaz Paketi
- T-MAX™ [B2]
- Id Continuous Drain Current
- 100 A
- Maks. Çalışma Sıcaklığı
- 150 °C
- Transistor Polarity
- N-Channel
- Ambalaj
- Tube
- Input Capacitance Ciss Max Vds
- 6850 pF @ 25 V
- Drain To Source Voltage Vdss
- 200 V
- Current Continuous Drain Id25
- 100A (Tc)
- Rds On Max Id Vgs
- 20mOhm @ 50A, 10V
- Turn Off Delay Time
- 26 ns
- Rise Time
- 40 ns
- Input Capacitance
- 6.85 nF
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