APT20M18LVRG

Specifications

Power Dissipation

625

Birim Ağırlık

0.211644 oz

Transistor Polarity

N-Channel

Pd Power Dissipation

625 W

Gate Charge Qg Max Vgs

330 nC @ 10 V

Paket

Tube

Qg Gate Charge

330 nC

Current Continuous Drain Id25

100A (Tc)

Rds On Max Id Vgs

18mOhm @ 50A, 10V

Drain To Source Voltage Vdss

200 V

Input Capacitance Ciss Max Vds

9880 pF @ 25 V

Continuous Drain Current Id

100

Ambalaj

Tube

Kılıf / Paket

TO-247-3

Fet Type

N-Channel

Number Of Channels

1 Channel

Vgsth Max Id

4V @ 2.5mA

Vgs Th Gatesource Threshold Voltage

2 V

Fabrika Paket Adedi

1

RoHS

Details

Configuration

Single

Montaj Stili

Through Hole

Vgs Gatesource Voltage

- 30 V, + 30 V

Seri

POWER MOS V®

Channel Mode

Enhancement

Rds On Drainsource Resistance

18 mOhms

Vds Drainsource Breakdown Voltage

200 V

Id Continuous Drain Current

100 A

Tedarikçi Cihaz Paketi

TO-264 [L]

Maks. Çalışma Sıcaklığı

+ 150 C

Ürün Durumu

Active

Channel Type

N

Minimum Operating Temperature

- 55 C

Temel Ürün No

APT20M18

Montaj Tipi

Through Hole