Volume pricing
- 1+ pcs$5.97
- 10+ pcs$5.63
- 100+ pcs$5.31
- 500+ pcs$5.01
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Dissipation Max
- 500W (Tc)
- Package Body Material
- PLASTIC/EPOXY
- Input Capacitance Ciss Max Vds
- 3760 pF @ 25 V
- Transistor Application
- SWITCHING
- Drainsource On Resistancemax
- 0.53 Ω
- Case Connection
- DRAIN
- Jesd30 Code
- R-PSFM-T3
- Number Of Terminals
- 3
- Minimum Operating Temperature
- - 55 C
- Typical Turnon Delay Time
- 21 ns
- Montaj
- Through Hole
- Part Package Code
- TO-247
- Rds On Drainsource Resistance
- 530 mOhms
- Maks. Çalışma Sıcaklığı
- + 150 C
- Ürün Durumu
- Active
- Ihs Manufacturer
- MICROSEMI CORP
- Risk Rank
- 1.78
- Forward Transconductance Min
- 17 S
- Pin Sayısı
- 3
- Turn On Delay Time
- 21 ns
- Voltage Rating Dc
- 800 V
- Transistor Element Material
- SILICON
- Input Capacitance
- 3.76 nF
- Gate To Source Voltage Vgs
- 30 V
- Rohs Code
- Yes
- Terminal Formu
- THROUGH-HOLE
- Vgsth Max Id
- 5V @ 1mA
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Qg Gate Charge
- 120 nC
- Polaritychannel Type
- N-CHANNEL
- Lifecycle Status
- Production (Last Updated: 2 months ago)
- Birim Ağırlık
- 0.211644 oz
- Temel Ürün No
- APT18M80
- Min. Çalışma Sıcaklığı
- -55 °C
- Operating Mode
- ENHANCEMENT MODE
- Reflow Temperaturemax S
- NOT SPECIFIED
- Tedarikçi Cihaz Paketi
- TO-247 [B]
- Montaj Stili
- Through Hole
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Vgs Th Gatesource Threshold Voltage
- 4 V
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