APT14M120S

Specifications

Pd Power Dissipation

625 W

Gate Charge Qg Max Vgs

145 nC @ 10 V

Lifecycle Status

Production (Last Updated: 2 months ago)

Transistor Polarity

N-Channel

Birim Ağırlık

0.218699 oz

Number Of Channels

1 Channel

Fet Type

N-Channel

Power Dissipation Max

625W (Tc)

Kılıf / Paket

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Vgsth Max Id

5V @ 1mA

Current Continuous Drain Id25

14A (Tc)

Rds On Max Id Vgs

1.1Ohm @ 7A, 10V

Drain To Source Voltage Vdss

1200 V

Qg Gate Charge

145 nC

Typical Turnoff Delay Time

85 ns

Paket

Tube

Ambalaj

Tube

Input Capacitance Ciss Max Vds

4765 pF @ 25 V

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Configuration

Single

Channel Mode

Enhancement

Vgs Gatesource Voltage

- 30 V, + 30 V

Forward Transconductance Min

15 S

Montaj Stili

SMD/SMT

Fabrika Paket Adedi

1

Vgs Th Gatesource Threshold Voltage

5 V

Rise Time

15 ns

Vgs Max

±30V

Minimum Operating Temperature

- 55 C

Transistor Type

1 N-Channel

Montaj Tipi

Surface Mount

Typical Turnon Delay Time

26 ns

Drive Voltage Max Rds On Min Rds On

10V

Temel Ürün No

APT14M120

Rds On Drainsource Resistance

1.1 Ohms

Ürün Durumu

Active

Ürün Tipi

MOSFET

Tedarikçi Cihaz Paketi

D3PAK

Maks. Çalışma Sıcaklığı

+ 150 C

Vds Drainsource Breakdown Voltage

1.2 kV