Volume pricing
- 1+ pcs$8.61
- 10+ pcs$8.12
- 100+ pcs$7.66
- 500+ pcs$7.23
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Ds Breakdown Voltagemin
- 1200 V
- Montaj
- Through Hole
- Package Style
- FLANGE MOUNT
- Fabrika Paket Adedi
- 1
- Drain To Source Breakdown Voltage
- 1.2 kV
- Kurşunsuz Kodu
- Yes
- Continuous Drain Current Id
- 3.5 A
- REACH Uyumluluk Kodu
- compliant
- Max Junction Temperature Tj
- 150 °C
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Seri
- POWER MOS 7®
- JESD-609 Kodu
- e1
- Operating Temperaturemax
- 150 °C
- Turn On Delay Time
- 7 ns
- Lifecycle Status
- Production (Last Updated: 2 months ago)
- Vgs Max
- ±30V
- Akım Değeri
- 3.5 A
- Avalanche Energy Rating Eas
- 425 mJ
- Risk Rank
- 1.41
- Birim Ağırlık
- 0.211644 oz
- Drive Voltage Max Rds On Min Rds On
- 10V
- Input Capacitance Ciss Max Vds
- 715 pF @ 25 V
- Input Capacitance
- 715 pF
- Gate Charge Qg Max Vgs
- 31 nC @ 10 V
- Turn Off Delay Time
- 20 ns
- Maks. Çalışma Sıcaklığı
- 150 °C
- Fet Type
- N-Channel
- Terminal Formu
- THROUGH-HOLE
- Kurşunsuz
- Lead Free
- Transistor Element Material
- SILICON
- Power Dissipation
- 135
- Channel Type
- N
- Pulsed Drain Currentmax Idm
- 14 A
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation Max
- 135W (Tc)
- Drain Currentmax Id
- 3.5 A
- Number Of Elements
- 1
- Drain To Source Resistance
- 4.7 Ω
- Reflow Temperaturemax S
- NOT SPECIFIED
- RoHS
- Details
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