APT11N80BC3G

Specifications

Typical Turnon Delay Time

25 ns

Fet Type

N-Channel

Channel Mode

Enhancement

Vgs Gatesource Voltage

- 20 V, + 20 V

Gate Charge Qg Max Vgs

60 nC @ 10 V

Input Capacitance Ciss Max Vds

1585 pF @ 25 V

Drive Voltage Max Rds On Min Rds On

10V

Birim Ağırlık

0.211644 oz

Pd Power Dissipation

156 W

Vds Drainsource Breakdown Voltage

800 V

Kılıf / Paket

TO-247-3

Rise Time

15 ns

Vgs Max

±20V

Rds On Max Id Vgs

450mOhm @ 7.1A, 10V

Power Dissipation Max

156W (Tc)

Typical Turnoff Delay Time

70 ns

Maks. Çalışma Sıcaklığı

+ 150 C

Vgsth Max Id

3.9V @ 680µA

Id Continuous Drain Current

11 A

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Ürün Durumu

Active

Temel Ürün No

APT11N80

Fabrika Paket Adedi

1

Genişlik

16.26 mm

Montaj Tipi

Through Hole

Drain To Source Voltage Vdss

800 V

Tedarikçi Cihaz Paketi

TO-247 [B]

Minimum Operating Temperature

- 55 C

Rds On Drainsource Resistance

390 mOhms

RoHS

Details

Yükseklik

5.31 mm

Transistor Polarity

N-Channel

Uzunluk

21.46 mm

Montaj Stili

Through Hole

Qg Gate Charge

60 nC

Fall Time

7 ns

Vgs Th Gatesource Threshold Voltage

3 V

Paket

Tube

Current Continuous Drain Id25

11A (Tc)

Ambalaj

Tube