APT10035LFLLG

Specifications

Fet Type

N-Channel

Channel Mode

Enhancement

Vgs Gatesource Voltage

- 30 V, + 30 V

Gate Charge Qg Max Vgs

186 nC @ 10 V

Input Capacitance Ciss Max Vds

5185 pF @ 25 V

Birim Ağırlık

0.352740 oz

Pd Power Dissipation

690 W

Vds Drainsource Breakdown Voltage

1 kV

Number Of Channels

1 Channel

Kılıf / Paket

TO-264-3

Rds On Max Id Vgs

370mOhm @ 14A, 10V

Maks. Çalışma Sıcaklığı

+ 150 C

Vgsth Max Id

5V @ 2.5mA

Id Continuous Drain Current

28 A

Ürün Durumu

Active

Temel Ürün No

APT10035

Fabrika Paket Adedi

1

Montaj Tipi

Through Hole

Drain To Source Voltage Vdss

1000 V

Minimum Operating Temperature

- 55 C

Tedarikçi Cihaz Paketi

TO-264 [L]

Rds On Drainsource Resistance

370 mOhms

Transistor Polarity

N-Channel

Configuration

Single

Montaj Stili

Through Hole

Qg Gate Charge

186 nC

Vgs Th Gatesource Threshold Voltage

3 V

Seri

POWER MOS 7®

Paket

Tube

Current Continuous Drain Id25

28A (Tc)

Ambalaj

Tube