Volume pricing
- 1+ pcs$0.55
- 10+ pcs$0.52
- 100+ pcs$0.49
- 500+ pcs$0.46
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Dissipation Max
- 1W Tc
- Kurşunsuz
- Lead Free
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 50pF @ 25V
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
- Contact Plating
- Tin
- Continuous Drain Current Id
- 230mA
- Montaj
- Through Hole
- Terminal Pozisyonu
- BOTTOM
- Vgsth Max Id
- 2.5V @ 250μA
- Feedback Capmax Crss
- 5 pF
- Terminal Sayısı
- 3
- Drive Voltage Max Rds On Min Rds On
- 5V 10V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Vgs Max
- ±30V
- JESD-609 Kodu
- e3
- Montaj Tipi
- Through Hole
- Gate To Source Voltage Vgs
- 30V
- Rds On Max Id Vgs
- 7.5 Ω @ 500mA, 10V
- Turn Off Delay Time
- 20 ns
- Weight
- 453.59237mg
- Operating Mode
- ENHANCEMENT MODE
- Genişlik
- 4.19mm
- Power Dissipation
- 1W
- Fabrika Tedarik Süresi
- 16 Weeks
- Parça Durumu
- Active
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Uzunluk
- 5.21mm
- Yükseklik
- 5.33mm
- Fet Type
- N-Channel
- Transistor Application
- SWITCHING
- Current Continuous Drain Id25
- 230mA Tj
- Drain To Source Breakdown Voltage
- 60V
- Yayın Yılı
- 2008
- Number Of Elements
- 1
- Turn On Delay Time
- 20 ns
- Ambalaj
- Bulk
- Number Of Channels
- 1
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