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Microchip Technology

2N5427

Single BJT Transistors

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Max Power Dissipation
40 W
Voltage Collector Emitter Breakdown Max
80 V
Currentcollector Ic Max
7 A
Radyasyon Dayanımı
No
Minimum Operating Temperature
- 65 C
RoHS
N
Emitter Base Voltage Vebo
6 V
Configuration
Single
Temel Ürün No
2N5427
Ürün Durumu
Active
Pd Power Dissipation
40 W
Montaj
Through Hole
Collector Base Voltage Vcbo
80 V
Maks. Çalışma Sıcaklığı
+ 200 C
Ambalaj
Tray
Maximum Dc Collector Current
7 A
Paket
Bulk
Collector Emitter Voltage Vceo
80 V
Montaj Stili
Through Hole
Power Max
40 W
Transistor Polarity
NPN
Collector Emitter Voltage Vceo Max
80 V
Max Collector Current
7 A
Montaj Tipi
Through Hole
Kılıf / Paket
TO-213AA, TO-66-2
Pin Sayısı
3
Tedarikçi Cihaz Paketi
TO-66
Collectoremitter Saturation Voltage
700 mV
Dc Current Gain Hfe Min Ic Vce
30 @ 7A, 80V
Fabrika Paket Adedi
1
Transistor Type
PNP

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