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Microchip Technology

2N3637UB/TR

Single BJT Transistors

In StockRoHS: Compliant

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Specifications

Transistor Polarity
PNP
Ambalaj
Reel
Maks. Çalışma Sıcaklığı
+ 200 C
Collector Emitter Voltage Vceo Max
175 V
Paket
Tape & Reel (TR)
Tedarikçi Cihaz Paketi
UB
Transistor Type
PNP
Dc Current Gain Hfe Max
300 at - 50 mA, - 10 V
Emitter Base Voltage Vebo
5 V
Power Max
1.5 W
Maximum Dc Collector Current
1 A
Dc Current Gain Hfe Min Ic Vce
100 @ 50mA, 10V
Fabrika Paket Adedi
1
Montaj Tipi
Surface Mount
Minimum Operating Temperature
- 65 C
Ürün Tipi
BJTs - Bipolar Transistors
Çalışma Sıcaklığı
-65°C ~ 200°C (TJ)
Currentcollector Ic Max
1 A
Configuration
Single
Current Collector Cutoff Max
10μA
Kılıf / Paket
3-SMD, No Lead
RoHS
N
Vce Saturation Max Ib Ic
600mV @ 5mA, 50mA
Montaj Stili
SMD/SMT
Technology
Si
Dc Collectorbase Gain Hfe Min
55 at 100 uA, 10 V
Pd Power Dissipation
1.5 W
Collector Base Voltage Vcbo
175 V
Collectoremitter Saturation Voltage
300 mV
Ürün Durumu
Active
Voltage Collector Emitter Breakdown Max
175 V

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