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Microchip Technology

2N2907AP

Single BJT Transistors

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Specifications

Transistor Type
PNP
Power Max
500 mW
Ürün Durumu
Active
Dc Current Gain Hfe Min Ic Vce
100 @ 150mA, 10V
Fabrika Paket Adedi
1
Voltage Collector Emitter Breakdown Max
60 V
Montaj Tipi
Through Hole
Ürün Tipi
BJTs - Bipolar Transistors
Çalışma Sıcaklığı
-65°C ~ 200°C (TJ)
Currentcollector Ic Max
600 mA
Current Collector Cutoff Max
50nA
Kılıf / Paket
TO-206AA, TO-18-3 Metal Can
Vce Saturation Max Ib Ic
1.6V @ 50mA, 500mA
Paket
Bulk
Tedarikçi Cihaz Paketi
TO-18 (TO-206AA)

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