Volume pricing
- 1+ pcs$112.38
- 10+ pcs$106.02
- 100+ pcs$100.02
- 500+ pcs$94.35
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Id Continuous Drain Current
- - 0.1 nA
- Ürün Durumu
- Active
- Voltage Breakdown Vbrgss
- 40 V
- Input Capacitance Ciss Max Vds
- 16pF @ 20V
- Montaj Stili
- Through Hole
- Maximum Drain Gate Voltage
- 40 V
- Çalışma Sıcaklığı
- -65°C ~ 175°C (TJ)
- Fet Type
- N-Channel
- Power Max
- 360 mW
- Drain To Source Voltage Vdss
- 40 V
- Technology
- Si
- Vds Drainsource Breakdown Voltage
- 40 V
- Maks. Çalışma Sıcaklığı
- + 175 C
- Vgs Gatesource Breakdown Voltage
- - 40 V
- Pd Power Dissipation
- 0.36 W
- Rds On Drainsource Resistance
- 80 Ohms
- Tedarikçi Cihaz Paketi
- 3-UB (3.09x2.45)
- Kılıf / Paket
- 3-SMD, No Lead
- Fabrika Paket Adedi
- 1
- RoHS
- N
- Seri
- *
- Tip
- JFET
- Resistance Rdson
- 80 Ohms
- Drainsource Current At Vgs0
- 8 mA
- Configuration
- Single
- Current Drain Idss Vds Vgs0
- 8 mA @ 20 V
- Transistor Polarity
- N-Channel
- Ürün Tipi
- JFETs
- Paket
- Retail Package
- Minimum Operating Temperature
- - 65 C
- Montaj Tipi
- Surface Mount
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