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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Maks. Çalışma Sıcaklığı
- + 175 C
- Pd Power Dissipation
- 0.36 W
- Vgs Gatesource Breakdown Voltage
- - 40 V
- Technology
- Si
- Vds Drainsource Breakdown Voltage
- 40 V
- Montaj Stili
- Through Hole
- Maximum Drain Gate Voltage
- 40 V
- Fet Type
- N-Channel
- Id Continuous Drain Current
- - 0.1 nA
- Ürün Durumu
- Active
- Ürün Tipi
- JFETs
- Transistor Polarity
- N-Channel
- Paket
- Bulk
- Minimum Operating Temperature
- - 65 C
- Drainsource Current At Vgs0
- 15 mA
- Configuration
- Single
- Fabrika Paket Adedi
- 1
- RoHS
- N
- Tip
- JFET
- Rds On Drainsource Resistance
- 50 Ohms
- Kılıf / Paket
- TO-18-3
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