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DTC143TCAT116

Pre-Biased BJT Transistors

RoHS: Compliant

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Specifications

Pin Sayısı
3
Additional Feature
DIGITAL, BUILT-IN BIAS RESISTOR
Frequency Transition
250MHz
Fabrika Tedarik Süresi
7 Weeks
Current Collector Cutoff Max
500nA
REACH Uyumluluk Kodu
not_compliant
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Transition Frequency
250MHz
Jesd30 Code
R-PDSO-G3
Parça Durumu
Active
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Lead Free Status Rohs Status
Lead free / RoHS Compliant
Qualification Status
Not Qualified
HTS Kodu
8541.21.00.75
Voltage Collector Emitter Breakdown Max
50V
Collectoremitter Breakdown Voltage
50V
Resistor Base R1
4.7 kOhms
Terminal Formu
GULL WING
Tedarikçi Cihaz Paketi
SST3
Operating Temperature Max
150°C
Number Of Elements
1
Polaritychannel Type
NPN
Collector Emitter Voltage Vceo
300mV
Montaj
Surface Mount
Other Names
DTC143TCAMGT116 DTC143TCAT116TR
Terminal Sayısı
3
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Power Max
200mW
Transistor Element Material
SILICON
Nem Hassasiyeti (MSL)
1 (Unlimited)
Yayın Yılı
2016
Vcesatmax
0.3 V
Transistor Type
NPN - Pre-Biased
Currentcollector Ic Max
100mA
Configuration
SINGLE WITH BUILT-IN RESISTOR
Max Collector Current
100mA
Dc Current Gain Hfe Min Ic Vce
100 @ 1mA, 5V
Transistor Application
SWITCHING
Terminal Pozisyonu
DUAL
Max Power Dissipation
200mW

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