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DTC123ECAT116

Pre-Biased BJT Transistors

RoHS: Compliant

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Specifications

Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Vce Saturation Max Ib Ic
300mV @ 500µA, 10mA
RoHS
Non-Compliant
Montaj
Surface Mount
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Terminal Sayısı
3
REACH Uyumluluk Kodu
not_compliant
Dc Current Gain Hfe Min Ic Vce
20 @ 20mA, 5V
Collector Emitter Voltage Vceo
300mV
Lead Free Status Rohs Status
Lead free / RoHS Compliant
Configuration
SINGLE WITH BUILT-IN RESISTOR
Montaj Tipi
Surface Mount
Yayın Yılı
2006
Nem Hassasiyeti (MSL)
1 (Unlimited)
Fabrika Tedarik Süresi
13 Weeks
Additional Feature
DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1
Frequency Transition
250MHz
Voltage Collector Emitter Breakdown Max
50V
Terminal Pozisyonu
DUAL
Parça Durumu
Active
Ambalaj
Tape & Reel (TR)
Transistor Application
SWITCHING
Max Power Dissipation
200mW
Number Of Elements
1
Current Collector Cutoff Max
500nA
Vcesatmax
0.3 V
Qualification Status
Not Qualified
ECCN Kodu
EAR99
Power Max
200mW
Collectoremitter Breakdown Voltage
50V
Transition Frequency
250MHz
Terminal Formu
GULL WING
Other Names
DTC123ECAMGT116 DTC123ECAT116TR
Transistor Type
NPN - Pre-Biased
Polaritychannel Type
NPN
Resistor Emitter Base R2
2.2 kOhms
Resistor Base R1
2.2 kOhms
RoHS Durumu
ROHS3 Compliant
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Transistor Element Material
SILICON

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