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DTC023EEBTL

Pre-Biased BJT Transistors

RoHS: Compliant

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Specifications

Output Voltage
80mV
Kılıf / Paket
SC-89, SOT-490
Resistor Emitter Base R2
2.2 kOhms
Voltage Collector Emitter Breakdown Max
50V
Power Max
150mW
Collector Emitter Voltage Vceo
200mV
Terminal Formu
FLAT
Montaj Tipi
Surface Mount
Collectoremitter Breakdown Voltage
50V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Currentcollector Ic Max
100mA
Transition Frequency
250MHz
Max Breakdown Voltage
50V
Max Power Dissipation
150mW
Dc Current Gain Hfe Min Ic Vce
20 @ 20mA, 10V
Transistor Element Material
SILICON
Kurşunsuz
Lead Free
Terminal Pozisyonu
DUAL
Tedarikçi Cihaz Paketi
EMT3F (SOT-416FL)
Ambalaj
Tape & Reel (TR)
Max Collector Current
100mA
Transistor Type
NPN - Pre-Biased
Continuous Collector Current
100mA
Frequency Transition
250MHz
Lead Free Status Rohs Status
Lead free / RoHS Compliant
Number Of Elements
1
Maks. Çalışma Sıcaklığı
150°C
RoHS Durumu
ROHS3 Compliant
Element Configuration
Single
Yayın Yılı
2013
Parça Durumu
Active
Other Names
DTC023EEBTLTR
Vce Saturation Max Ib Ic
200mV @ 1mA, 10mA
Fabrika Tedarik Süresi
13 Weeks
Transistor Application
SWITCHING
Resistor Base R1
2.2 kOhms
Polarity
NPN
Terminal Sayısı
3
Additional Feature
BUILT IN BIAS RESISTANCE RATIO IS 1
Max Frequency
250MHz

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