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DTA115ECAT116

Pre-Biased BJT Transistors

RoHS: Compliant

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Specifications

Polaritychannel Type
PNP
Parça Durumu
Active
Qualification Status
Not Qualified
Frequency Transition
250MHz
Max Collector Current
100mA
Terminal Formu
GULL WING
Terminal Sayısı
3
Pin Sayısı
3
Vcesatmax
0.3 V
Transistor Element Material
SILICON
RoHS Durumu
ROHS3 Compliant
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Ambalaj
Tape & Reel (TR)
Montaj Tipi
Surface Mount
Operating Temperature Max
150°C
Voltage Collector Emitter Breakdown Max
50V
HTS Kodu
8541.21.00.75
Montaj
Surface Mount
Jesd30 Code
R-PDSO-G3
Additional Feature
DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1
Current Collector Cutoff Max
500nA
Terminal Pozisyonu
DUAL
Lead Free Status Rohs Status
Lead free / RoHS Compliant
Collectoremitter Breakdown Voltage
50V
REACH Uyumluluk Kodu
not_compliant
Fabrika Tedarik Süresi
13 Weeks
Number Of Elements
1
Collector Emitter Voltage Vceo
300mV
Transition Frequency
250MHz
Other Names
DTA115ECAMGT116 DTA115ECAT116TR
Dc Current Gain Hfe Min Ic Vce
82 @ 5mA, 5V
Transistor Application
SWITCHING
Max Breakdown Voltage
50V
Max Power Dissipation
200mW
Resistor Emitter Base R2
100 kOhms
Transistor Type
PNP - Pre-Biased
Nem Hassasiyeti (MSL)
1 (Unlimited)
Yayın Yılı
2015
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED

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