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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Output Voltage
- -70mV
- Max Power Dissipation
- 200mW
- Voltage Collector Emitter Breakdown Max
- 50V
- Additional Feature
- BUILT IN BIAS RESISTANCE RATIO IS 1
- Max Frequency
- 250MHz
- Emitter Base Voltage Vebo
- -2.6V
- Terminal Pozisyonu
- DUAL
- Ambalaj
- Tape & Reel (TR)
- Voltage Rating
- 100 V
- Kurşunsuz
- Lead Free
- Temperature Coefficient
- 25 ppm/°C
- Yayın Yılı
- 2013
- Resistor Emitter Base R2
- 10 kOhms
- Pin Sayısı
- 85
- Collector Emitter Voltage Vceo
- 150mV
- Lead Free Status Rohs Status
- Lead free / RoHS Compliant
- Parça Durumu
- Active
- Direnç
- 1.69 kΩ
- Vce Saturation Max Ib Ic
- 150mV @ 500µA, 5mA
- Dc Current Gain Hfe Min Ic Vce
- 35 @ 5mA, 10V
- Tedarikçi Cihaz Paketi
- UMT3F
- Transistor Type
- PNP - Pre-Biased
- Resistor Base R1
- 10 kOhms
- Composition
- Thin Film
- Frequency Transition
- 250MHz
- Max Breakdown Voltage
- 50V
- Number Of Elements
- 1
- ECCN Kodu
- EAR99
- Collectoremitter Breakdown Voltage
- 50V
- Currentcollector Ic Max
- 50mA
- Fabrika Tedarik Süresi
- 13 Weeks
- Kılıf / Paket
- SC-85
- Tolerans
- 1 %
- Maks. Çalışma Sıcaklığı
- 155 °C
- Polarity
- PNP
- Yükseklik
- 650 µm
- Terminal Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Terminal Formu
- FLAT
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