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IXFX80N50P

IXYS

IXFX80N50P

Single MOSFETs Transistors

RoHS: Compliant

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Specifications

Yayın Yılı
2006
Voltage Rated Dc
500V
Minimum Operating Temperature C
-55
Terminal Kaplaması
Tin/Silver/Copper (Sn/Ag/Cu)
Montaj
Through Hole
RoHS Durumu
ROHS3 Compliant
Number Of Elements
1
Turn Off Delay Time
70 ns
Gate Charge Qg Max Vgs
197nC @ 10V
Maximum Continuous Drain Current A
80
Kılıf / Paket
TO-247-3
Fabrika Tedarik Süresi
30 Weeks
Package Width
5.21(Max)
Seri
HiPerFET™, PolarHT™
Drain To Source Breakdown Voltage
500V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Fall Time Typ
16 ns
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Maximum Drain Source Voltage V
500
Kurşunsuz Kodu
yes
Montaj Tipi
Through Hole
Pulsed Drain Currentmax Idm
200A
Category
Power MOSFET
JESD-609 Kodu
e1
Typical Turnon Delay Time Ns
25
Typical Fall Time Ns
16
Mounting
Through Hole
Parça Durumu
Active
Svhc Exceeds Threshold
Yes
Fet Type
N-Channel
Continuous Drain Current Id
80A
Gate To Source Voltage Vgs
30V
Maximum Gate Source Voltage V
±30
Svhc
Yes
Pin Sayısı
3
Drive Voltage Max Rds On Min Rds On
10V
Transistor Application
SWITCHING
Case Connection
DRAIN
Terminal Sayısı
3
Current Continuous Drain Id25
80A Tc

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