IXFX66N85X

Specifications

Drain To Source Voltage Vdss

850V

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2016

Minimum Operating Temperature C

-55

Montaj

Through Hole

Maximum Gate Threshold Voltage V

5.5

Maximum Continuous Drain Current A

66

Gate Charge Qg Max Vgs

230nC @ 10V

Fabrika Tedarik Süresi

19 Weeks

Kılıf / Paket

TO-247-3

Seri

HiPerFET™

Package Width

5.21(Max)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

Maximum Drain Source Voltage V

850

Category

Power MOSFET

Montaj Tipi

Through Hole

Typical Fall Time Ns

20

Typical Turnon Delay Time Ns

40

Mounting

Through Hole

Svhc

Yes

Maximum Gate Source Voltage V

±30

Parça Durumu

Active

Svhc Exceeds Threshold

Yes

Fet Type

N-Channel

Continuous Drain Current Id

66A

Pin Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Current Continuous Drain Id25

66A Tc

Power Dissipation Max

1250W Tc

Configuration

Single

Pcb Changed

3

Channel Mode

Enhancement

Maximum Drain Source Resistance Mohm

65@10V

Typical Gate Charge Vgs Nc

230@10V

Rds On Max Id Vgs

65m Ω @ 500mA, 10V

Input Capacitance Ciss Max Vds

8900pF @ 25V

Maximum Operating Temperature C

150

Package Height

21.34(Max)

Number Of Elements Per Chip

1