IXFX64N60P3

Specifications

Jesd30 Code

R-PSIP-T3

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

1130W Tc

Configuration

Single

Pcb Changed

3

Maximum Drain Source Resistance Mohm

100@10V

Typical Gate Charge Vgs Nc

145@10V

Channel Mode

Enhancement

Rds On Max Id Vgs

95m Ω @ 32A, 10V

Id Continuous Drain Current

64 A

Maximum Operating Temperature C

150

Element Configuration

Single

Yükseklik

21.34mm

Package Height

21.34(Max)

Input Capacitance Ciss Max Vds

9900pF @ 25V

Maks. Çalışma Sıcaklığı

+ 150 C

Transistor Element Material

SILICON

Ambalaj

Tube

Maximum Power Dissipation Mw

1130000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

9900@25V

Number Of Channels

1 Channel

Supplier Package

PLUS 247

Additional Feature

AVALANCHE RATED

Rds On Drainsource Resistance

95 mOhms

Channel Type

N

Qualification Status

Not Qualified

Vgsth Max Id

5V @ 4mA

Tab

Tab

Eu Rohs

Compliant with Exemption

Vds Drainsource Breakdown Voltage

600 V

Package Length

16.13(Max)

Typical Rise Time Ns

17

Automotive

No

Typical Turnoff Delay Time Ns

66

Qg Gate Charge

145 nC

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

17ns

Power Dissipation

1.13kW

Vgs Th Gatesource Threshold Voltage

5 V