IXFX230N20T

Specifications

Ppap

No

Radyasyon Dayanımı

No

Typical Gate Charge10v Nc

378

Vgs Max

±20V

Pin Sayısı

247

Power Dissipation

1.67kW

Automotive

No

Package Length

16.13(Max)

Typical Rise Time Ns

35

Eu Rohs

Compliant with Exemption

Kurşunsuz

Lead Free

Tab

Tab

Vgsth Max Id

5V @ 8mA

Channel Type

N

Process Technology

GigaMOS

Additional Feature

AVALANCHE RATED

Supplier Package

ISOPLUS 247

Typical Input Capacitance Vds Pf

28000@25V

Maximum Power Dissipation Mw

1670000

Number Of Elements Per Chip

1

Maks. Çalışma Sıcaklığı

175°C

Ambalaj

Tube

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

28000pF @ 25V

Package Height

21.34(Max)

Maximum Operating Temperature C

175

Element Configuration

Single

Rds On Max Id Vgs

7.5m Ω @ 60A, 10V

Channel Mode

Enhancement

Typical Gate Charge Vgs Nc

378@10V

Maximum Drain Source Resistance Mohm

7.5@10V

Pcb Changed

3

Configuration

Single

Power Dissipation Max

1670W Tc

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-PSIP-T3

Current Continuous Drain Id25

230A Tc

Terminal Sayısı

3

Case Connection

DRAIN

Transistor Application

SWITCHING