IXFX180N25T

Specifications

Vgsth Max Id

5V @ 8mA

Qualification Status

Not Qualified

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Channel Type

N

Process Technology

GigaMOS

Additional Feature

AVALANCHE RATED

Supplier Package

PLUS 247

Package Length

16.13(Max)

Typical Rise Time Ns

33

Eu Rohs

Compliant with Exemption

Kurşunsuz

Lead Free

Tab

Tab

Çalışma Sıcaklığı

-55°C~150°C TJ

Typical Turnoff Delay Time Ns

100

Automotive

No

Ds Breakdown Voltagemin

250V

Ppap

No

Typical Gate Charge10v Nc

345

Vgs Max

±20V

Power Dissipation Max

1390W Tc

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-PSIP-T3

Channel Mode

Enhancement

Typical Gate Charge Vgs Nc

345@10V

Maximum Drain Source Resistance Mohm

12.9@10V

Pcb Changed

3

Configuration

SINGLE WITH BUILT-IN DIODE

Input Capacitance Ciss Max Vds

28000pF @ 25V

Package Height

21.34(Max)

Maximum Operating Temperature C

150

Rds On Max Id Vgs

12.9m Ω @ 60A, 10V

Typical Input Capacitance Vds Pf

28000@25V

Maximum Power Dissipation Mw

1390000

Number Of Elements Per Chip

1

Ambalaj

Tube

Transistor Element Material

SILICON

ECCN Kodu

EAR99

JESD-609 Kodu

e1

Category

Power MOSFET

Montaj Tipi

Through Hole