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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- TO-247-3
- Rds On Max Id Vgs
- 12.5m Ω @ 75A, 10V
- Fabrika Tedarik Süresi
- 8 Weeks
- Element Configuration
- Single
- Input Capacitance Ciss Max Vds
- 9100pF @ 25V
- Seri
- HiPerFET™
- Drain To Source Breakdown Voltage
- 150V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Fall Time Typ
- 45 ns
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Kurşunsuz Kodu
- yes
- Ambalaj
- Tube
- Montaj
- Through Hole
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Yayın Yılı
- 2000
- RoHS Durumu
- RoHS Compliant
- Power Dissipation Max
- 560W Tc
- Operating Mode
- ENHANCEMENT MODE
- Number Of Elements
- 1
- Drainsource On Resistancemax
- 0.0125Ohm
- Gate Charge Qg Max Vgs
- 360nC @ 10V
- Turn Off Delay Time
- 110 ns
- Continuous Drain Current Id
- 150A
- Parça Durumu
- Obsolete
- Fet Type
- N-Channel
- Gate To Source Voltage Vgs
- 20V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Pin Sayısı
- 3
- Power Dissipation
- 560W
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 60ns
- Pin Sayısı
- 3
- Case Connection
- DRAIN
- Transistor Application
- SWITCHING
- Terminal Sayısı
- 3
- Vgs Max
- ±20V
- Current Continuous Drain Id25
- 150A Tc
- Pulsed Drain Currentmax Idm
- 600A
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