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IXFX120N65X2

IXYS

IXFX120N65X2

Single MOSFETs Transistors

RoHS: Compliant

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Compliant

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Specifications

Svhc
Yes
Maximum Gate Source Voltage V
±30
Continuous Drain Current Id
120A
Parça Durumu
Active
Svhc Exceeds Threshold
Yes
Transistor Polarity
N-Channel
Fet Type
N-Channel
Hts
8541.29.00.95
Drive Voltage Max Rds On Min Rds On
10V
Pin Sayısı
3
Vgs Gatesource Voltage
- 30 V, + 30 V
Current Continuous Drain Id25
120A Tc
Technology
Si
Category
Power MOSFET
Montaj Tipi
Through Hole
Typical Fall Time Ns
12
Typical Turnon Delay Time Ns
39
Mounting
Through Hole
Fabrika Tedarik Süresi
19 Weeks
Kılıf / Paket
TO-247-3
Pd Power Dissipation
1.25 kW
Seri
HiPerFET™
Package Width
5.21(Max)
REACH Uyumluluk Kodu
unknown
Montaj Stili
Through Hole
Nem Hassasiyeti (MSL)
1 (Unlimited)
Maximum Drain Source Voltage V
650
Drain To Source Voltage Vdss
650V
RoHS Durumu
ROHS3 Compliant
Montaj
Through Hole
Yayın Yılı
2015
Minimum Operating Temperature C
-55
Maximum Gate Threshold Voltage V
5
Minimum Operating Temperature
- 55 C
Maximum Continuous Drain Current A
120
Gate Charge Qg Max Vgs
225nC @ 10V
Automotive
No
Power Dissipation
1.25kW
Çalışma Sıcaklığı
-55°C~150°C TJ
Typical Turnoff Delay Time Ns
82

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