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Specifications
- Transistor Element Material
- SILICON
- Ambalaj
- Tube
- Number Of Elements Per Chip
- 1
- Maximum Power Dissipation Mw
- 156000
- Typical Input Capacitance Vds Pf
- 5500@25V
- Element Configuration
- Single
- Maximum Operating Temperature C
- 150
- Package Height
- 21.34(Max)
- Input Capacitance Ciss Max Vds
- 5500pF @ 25V
- Rds On Max Id Vgs
- 190m Ω @ 18A, 10V
- Drainsource Onvolt
- 500(V)
- Typical Gate Charge Vgs Nc
- 93@10V
- Maximum Drain Source Resistance Mohm
- 190@10V
- Channel Mode
- Enhancement
- Configuration
- Single
- Pcb Changed
- 3
- Operating Mode
- ENHANCEMENT MODE
- Operating Temperature Classification
- Military
- Power Dissipation Max
- 156W Tc
- Akım Değeri
- 36A
- Polarity
- N
- Vgs Max
- ±30V
- Typical Gate Charge10v Nc
- 93
- Ppap
- No
- Pin Sayısı
- 3
- Material
- Si
- Typical Turnoff Delay Time Ns
- 82
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 23ns
- Power Dissipation
- 156W
- Automotive
- No
- Package Length
- 16.13(Max)
- Typical Rise Time Ns
- 23
- Tab
- Tab
- Kurşunsuz
- Lead Free
- Eu Rohs
- Compliant with Exemption
- Tip
- Power MOSFET
- Channel Type
- N
- Process Technology
- HiperFET
- Vgsth Max Id
- 5V @ 4mA
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